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In-situ deposition mask layer for device singulation by laser scribing and plasma etching
In-situ deposition mask layer for device singulation by laser scribing and plasma etching
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机译:原位沉积掩模层,用于通过激光划片和等离子刻蚀将器件切单
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摘要
Methods of dicing substrates by both laser scribing and plasma etching. A method includes forming an in-situ mask with a plasma etch chamber by accumulating a thickness of plasma deposited polymer to protect IC bump surfaces from a subsequent plasma etch. Second mask materials, such as a water soluble mask material may be utilized along with the plasma deposited polymer. At least some portion of the mask is patterned with a femtosecond laser scribing process to provide a patterned mask with trenches. The patterning exposing regions of the substrate between the ICs in which the substrate is plasma etched to singulate the IC and the water soluble material layer washed off.
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