SiC EPITAXIAL SUBSTRATE MANUFACTURING DEVICE, METHOD FOR MANUFACTURING SiC EPITAXIAL SUBSTRATE, AND SiC EPITAXIAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide: a SiC epitaxial substrate manufacturing device, capable of reducing the transmission of basal plane dislocations to an epitaxial layer without deteriorating productivity; a method for manufacturing a SiC epitaxial substrate; and a SiC epitaxial substrate.;SOLUTION: A SiC epitaxial substrate manufacturing device 1 of the present invention forms an epitaxial layer on a SiC substrate 14. The SiC epitaxial substrate manufacturing device 1 includes a plurality of temperature ranges, and a moving mechanism for moving the entire of the SiC substrate 14 between the temperature ranges.;COPYRIGHT: (C)2014,JPO&INPIT