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DEFECT CORRECTION METHOD OF TEMPLATE FOR NANOIMPRINT LITHOGRAPHY, AND METHOD OF MANUFACTURING TEMPLATE FOR NANOIMPRINT LITHOGRAPHY
DEFECT CORRECTION METHOD OF TEMPLATE FOR NANOIMPRINT LITHOGRAPHY, AND METHOD OF MANUFACTURING TEMPLATE FOR NANOIMPRINT LITHOGRAPHY
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机译:纳米压印术的模板的缺陷校正方法以及纳米压印术的模板制造方法
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摘要
PROBLEM TO BE SOLVED: To provide a defect correction method of a template for nanoimprint lithography capable of easily correcting both residue defect and deficiency defect, and to provide a method of manufacturing a template for nanoimprint lithography.;SOLUTION: A hard mask pattern is formed by transferring a transfer pattern of a first template to a hard mask layer formed on a substrate constituting a second template, by using a first template having well-known defect position information. Defect of the hard mask pattern is corrected based on the defect position information of a transfer pattern of the first template, and then a transfer pattern of the second template is formed using the hard mask pattern subjected to defect correction as an etching mask.;COPYRIGHT: (C)2014,JPO&INPIT
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