The stress source is given adjoining to the gate electrode of the technical 1st field-effect transistor which in the transistor which quite is approached to the channel field by

摘要

Generation of strained channel region adjacent field-effect transistor (100, 200) and (104, 204) in so as to improve, by providing (112D, 212D) a recess in (114, 214) drain and source regions, is formed in the recess (112, 212) is (118, 218) high stress layer, such as a contact etch stop layer. Furthermore, from the fact that by avoiding or reducing the relaxation effect undesirable metal silicide (217) is provided (230) is very close to the channel region (104, 204) semiconductor material that is distortion, the distortion I also improved effective to produce. In some embodiments, to obtain the strain-inducing mechanism more effective, it may be combined both effects.