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Method for forming a titanium-containing layer on a substrate using atomic layer deposition (ALD)
Method for forming a titanium-containing layer on a substrate using atomic layer deposition (ALD)
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机译:使用原子层沉积(ALD)在基板上形成含钛层的方法
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摘要
Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(Me5Cp)(OR)3, wherein R is selected from methyl, ethyl, or isopropyl is provided. The vapor is reacted with the substrate according to an atomic layer deposition process to form a titanium-containing complex on the surface of the substrate.
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