首页> 外国专利> Semiconductor device simulation device

Semiconductor device simulation device

机译:半导体器件模拟器件

摘要

A simulation apparatus of semiconductor device includes a first calculator, a second calculator, a third calculator, a fourth calculator, and a controller. The first calculator applies a voltage to an area which functions as a virtual electrode, and setting a pseudo-Fermi level of a first carrier in the area functioning as the virtual electrode to calculate a first carrier density. The second calculator analyzes continuous equation of a second carrier to calculate a second carrier density. The third calculator uses the first carrier density as a function of an electrostatic potential, and solving a first equation of the function and a Poisson's equation to calculate an electrostatic potential and the first carrier density expressed by the function. The fourth calculator calculates a current density of the first carrier to calculate a current flowing. The controller controls the voltage applied to the virtual electrode.
机译:半导体装置的模拟装置包括第一计算器,第二计算器,第三计算器,第四计算器和控制器。第一计算器将电压施加到用作虚拟电极的区域,并在用作虚拟电极的区域中设置第一载流子的伪费米能级,以计算第一载流子密度。第二计算器分析第二载流子的连续方程,以计算第二载流子密度。第三计算器使用第一载流子密度作为静电势的函数,并求解该函数的第一方程式和泊松方程,以计算静电势和由该函数表示的第一载流子密度。第四计算器计算第一载流子的电流密度以计算流动的电流。控制器控制施加到虚拟电极的电压。

著录项

  • 公开/公告号JP5416966B2

    专利类型

  • 公开/公告日2014-02-12

    原文格式PDF

  • 申请/专利权人 株式会社東芝;

    申请/专利号JP20080334637

  • 发明设计人 遠田 利之;

    申请日2008-12-26

  • 分类号H01L29;G06F17/50;

  • 国家 JP

  • 入库时间 2022-08-21 16:13:34

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号