The emission discharge semiconductor chip and its production methodological null emission discharge semiconductor chip which possess

摘要

This invention, the semiconductor body which possesses the carrier (5) and the semiconductor layered product (2) and, the emission discharge semiconductor chip which it has regards (1). The semiconductor layered product has, the active region which is provided in order to generate emission (20) with, 1st semiconductor layer (21) with, 2nd semiconductor layer (22) with. The active region is arranged with 1st semiconductor layer and 2nd semiconductor layer. 1st semiconductor layer is arranged on the surface of the active region of opposite side to the carrier. Carrying out the active region, extending one which has been present concave section (25) it possesses the semiconductor body, at least. 1st semiconductor layer is connected 1st connected layer (31) electric conduction, 1st connected layer in the concave section from 1st semiconductor layer extending has been present in direction of the carrier. 1st connected layer is connected to 2nd semiconductor layer electrically by the protective diode (4). Furthermore, the method of producing the emission discharge semiconductor chip is offered. Selective figure Figure 2