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Being the substrate base material which is used inside the reaction chamber of the revised substrate temperature control null

机译:作为在修改后的基板温度控制的反应室内使用的基板基材null

摘要

Topic SolutionsThe substrate base material which is used inside the reaction chamber of the plasma central processing unit is disclosed. The substrate base material has with the conduction of heat component which is located on the based component and the based component. The conduction of heat component has had the multiple fields, each field of the conduction of heat component individually is heated and is cooled and. The electrostatic chuck is laid out on the conduction of heat component. The electrostatic chuck has the back face in order to support the substrate inside the reaction chamber of the plasma central processing unit. Cold liquid source and hot liquid source have communicated, the channel and the fluid of each field. Valve configuration in order to control the temperature of the liquid independently, inside the channel by adjusting the air-fuel ratio of the hot liquid and the cold liquid which wrap, is operation possible. With another execution configuration, the heating element which is laid out alongside the supply line and the transport line, before wrapping to the channel, heats the liquid from liquid source. Choice figure Drawing 6
机译:解决方案公开了在等离子体中央处理单元的反应室内使用的基板基材。基底基材具有导热成分,该导热成分位于基础成分和基础成分上。热分量的传导具有多个场,热分量的传导的每个场分别被加热和冷却。静电吸盘被放置在热成分的传导上。静电吸盘具有背面,以将基板支撑在等离子体中央处理单元的反应室内。冷液源和热液源已经连通,各个场的通道和流体连通。为了通过调节包裹的热液体和冷液体的空燃比来在通道内部独立地控制液体的温度的阀构造是可能的。在另一个执行配置中,在缠绕到通道之前,与供应管线和运输管线并排布置的加热元件会加热来自液体源的液体。<选择图>图6

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