Wiring defect inspection method, wiring defect inspection apparatus, and semiconductor substrate manufacturing method

摘要

A wiring defect inspection method according to the present invention acquires a resistance value of a short circuit path of a semiconductor substrate, applies a voltage specified based on the acquired resistance value to the semiconductor substrate having the defect portion, and The defective portion is heated to raise the temperature, and the semiconductor substrate on which the defective portion has generated heat and the temperature has risen is photographed with an infrared camera.