Wiring defect inspection method and a wiring defect inspection apparatus, and method of manufacturing a semiconductor substrate

摘要

A wiring defect inspecting method in accordance with the present invention comprises: obtaining a resistance of a short-circuited path of a semiconductor substrate; applying a voltage, which is specified on the basis of the resistance obtained, to the semiconductor substrate having a defect portion so as to cause the defect portion to generate heat; and capturing, with use of an infrared camera, an image of the semiconductor substrate whose temperature has increased due to the heat generated from the defect portion.