Photomask information acquisition method, photomask quality display method, electronic device manufacturing support method, electronic device manufacturing method, and photomask product

摘要

A photomask information acquisition method is provided to allow a user to determine the exposure condition of the photo mask and manufacturing condition of the target object considering the characteristic of the resistor since a photo mask including a pattern data of the penetrated light is generated. A resist film on a target layer to be etched is exposed under a certain exposure condition by using a certain transfer pattern composed of light shielding unit, light-transmitting unit and half light-transmitting unit, and the resist residue which is used as a mask in etching process has different resist pattern, which is used for obtaining a photomaks. By using an approximate exposure condition to a certain condition, the photomask or a test mask is exposed and the transmission light pattern of the potomask or test photomask is obtained through an image pick up device. The potomask information including transmission light pattern data is generated based on obtained transmission light pattern.