首页>
外国专利>
SEMICONDUCTOR STRUCTURES, DEVICES AND ENGINEERED SUBSTRATES INCLUDING LAYERS OF SEMICONDUCTOR MATERIAL HAVING REDUCED LATTICE STRAIN
SEMICONDUCTOR STRUCTURES, DEVICES AND ENGINEERED SUBSTRATES INCLUDING LAYERS OF SEMICONDUCTOR MATERIAL HAVING REDUCED LATTICE STRAIN
展开▼
机译:具有减少晶格应变的半导体材料层的半导体结构,器件和工程化基体
展开▼
页面导航
摘要
著录项
相似文献
摘要
Methods of fabricating semiconductor devices or structures include forming structures of a semiconductor material overlying a layer of a compliant material, subsequently changing the viscosity of the compliant material to relax the semiconductor material structures, and utilizing the relaxed semiconductor material structures as a seed layer in forming a continuous layer of relaxed semiconductor material. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Novel intermediate structures are formed during such methods. Engineered substrates include a continuous layer of semiconductor material having a relaxed lattice structure.
展开▼