METHODS OF FORMING LAYERS OF SEMICONDUCTOR MATERIAL HAVING REDUCED LATTICE STRAIN, SEMICONDUCTOR STRUCTURES, DEVICES AND ENGINEERED SUBSTRATES INCLUDING SAME

摘要

steps of a method for fabricating semiconductor devices or structures forming the flexible material layer overlying the semiconductor material structure and then a step of utilizing a semiconductor material comprising changing the viscosity of the dielectric material so as to relax the structure , and subsequent relaxation the relaxed semiconductor material layer to form a semiconductor structure with a seed layer material . In some embodiments, the semiconductor material layer may include, for example, a III-V semiconductor material such as indium gallium nitride . New intermediate structure are formed in this way in the middle . Processed substrates are semiconductor material comprises a continuous layer having a relaxed lattice structure . ;