PHASE-CHANGE MEMORY DEVICE AND METHOD FOR MULTI-LEVEL PROGRAMMING OF PHASE-CHANGE MEMORY DEVICE

摘要

The present disclosure provides a multi-level programming method of a phase-change memory device. The multi-level programming method comprises selecting a word line, where data are to be input, from multiple word lines; applying multiple bits of data to a bit line of a cell connected to the selected word line; applying a program current to the selected word line for programming of first data; applying a program current to the selected word line and applying a multi-level program current lower than the program current to one of word lines adjacent to the selected word line for programming of second data; and applying a program current to the selected word line and applying a multi-level program current lower than the program current to tow of the word lines adjacent to the selected word line for programming of third data.