Phase-change memory device and method for multi-level programming of phase-change memory device

摘要

A method for multi-level programming of a phase change memory device includes selecting a word line from multiple word lines and applying multiple bits of data to a bit line of a cell connected to the selected word line. According to the type of data, the method applies a program current to the selected word line or a multi-level program current to word lines adjacent to the selected word line.