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FIN ETCH AND FIN REPLACEMENT FOR FINFET INTEGRATION
FIN ETCH AND FIN REPLACEMENT FOR FINFET INTEGRATION
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机译:FIN FET集成的FIN蚀刻和FIN更换
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摘要
A method and device are provided for etching and replacing silicon fins in connection with a FinFET integration process. Embodiments include providing a first plurality and a second plurality of silicon fins on a silicon wafer with an oxide between adjacent silicon fins; forming a first nitride liner on an upper surface of the first plurality of silicon fins and the oxide therebetween; etching the second plurality of silicon fins, forming trenches; removing the first nitride liner; depositing a second nitride liner on an upper surface of the first plurality of silicon fins and the oxide therebetween and in the trenches; removing the second nitride liner down to the upper surface of the first plurality of silicon fins; and recessing the oxide.
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