首页> 外国专利> MANUFACTURING METHOD OF SUBSTRATE FOR A SEMICONDUCTOR PACKAGE, MANUFACTURING METHOD OF SEMICONDUCTOR PACKAGE, SUBSTRATE FOR A SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR PACKAGE

MANUFACTURING METHOD OF SUBSTRATE FOR A SEMICONDUCTOR PACKAGE, MANUFACTURING METHOD OF SEMICONDUCTOR PACKAGE, SUBSTRATE FOR A SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR PACKAGE

机译:半导体封装件的制造方法,半导体封装件的制造方法,半导体封装件的衬底和半导体封装件

摘要

A manufacturing method of a substrate for a semiconductor package includes a resist layer forming step to form a resist layer on a surface of a conductive substrate; an exposure step to expose the resist layer using a glass mask with a mask pattern including a transmission area, a light shielding area, and an intermediate transmission area, wherein transmittance of the intermediate transmission area is lower than that of the transmission area and is higher than that of the light shielding area; a development step to form a resist pattern including a hollow with a side shape including a slope part decreasing in hollow circumference as the hollow circumference approaches the substrate; and a plating step to plate on an exposed area to form a metal layer with a side shape including a slope part decreasing in circumference as the circumference approaches the substrate.
机译:用于半导体封装的基板的制造方法包括:抗蚀剂层形成步骤,以在导电基板的表面上形成抗蚀剂层;使用具有包括透射区域,遮光区域和中间透射区域的掩模图案的玻璃掩模对抗蚀剂层进行曝光的曝光步骤,其中,中间透射区域的透射率低于透射区域,并且透射率较高。比遮光区域大;显影步骤,以形成抗蚀剂图案,该抗蚀剂图案包括具有凹陷形状的凹陷部分,该凹陷部分的形状包括随着凹陷部分的周围而凹陷的部分的凹陷部分。电镀步骤是在暴露区域上电镀以形成具有包括随着周缘接近基板而周缘减小的倾斜部分的侧面形状的金属层的金属层。

著录项

  • 公开/公告号US2013309818A1

    专利类型

  • 公开/公告日2013-11-21

    原文格式PDF

  • 申请/专利权人 SUMITOMO METAL MINING CO. LTD.;

    申请/专利号US201313951612

  • 发明设计人 YOICHIRO HAMADA;SHIGERU HOSOMOMI;

    申请日2013-07-26

  • 分类号H01L21/56;

  • 国家 US

  • 入库时间 2022-08-21 16:05:56

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