GAS CLUSTER ION BEAM ETCHING PROCESS FOR ACHIEVING TARGET ETCH PROCESS METRICS FOR MULTIPLE MATERIALS

摘要

A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics.