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Method for manufacturing thin-film transistor active device and thin-film transistor active device manufactured with same
Method for manufacturing thin-film transistor active device and thin-film transistor active device manufactured with same
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机译:薄膜晶体管有源器件的制造方法以及由该方法制造的薄膜晶体管有源器件
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摘要
The present invention provides a method for manufacturing thin-film transistor active device and a thin-film transistor active device manufactured with the method. The method includes providing a substrate; forming a gate terminal on the substrate through sputtering and masking operations; forming a gate insulation layer on the gate terminal through CVD; forming an oxide semiconductor layer on the gate insulation layer through sputtering and masking operations; forming a first protection layer on the oxide semiconductor layer through CVD, forming a metal layer on the first protection layer through sputtering, and forming a data line electrode through masking operation; forming a second protection layer on the first protection layer and the data line electrode through CVD and forming first, second, and third bridging holes through masking operation; forming a transparent conductive layer on the second protection layer through sputtering and patternizing the transparent conductive layer through masking operation.
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