METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR ACTIVE DEVICE AND THIN-FILM TRANSISTOR ACTIVE DEVICE MANUFACTURED THEREBY

摘要

Disclosed are a method for manufacturing a thin-film transistor active device and the thin-film transistor active device manufactured thereby. The method comprises: step 1, providing a substrate (20); step 2, forming a gate (22) on the substrate (20) by means of sputtering and photo-masking procedures; step 3, forming a gate insulating layer (23) on the gate (22) through chemical vapor deposition; step 4, forming an oxide semiconductor layer (24) on the gate insulating layer (23) through sputtering and photo-masking; step 5, forming a first protection layer (25) on the oxide semiconductor layer (24) through chemical vapor deposition, forming a metal layer on the first protection layer (25) through sputtering, and forming a data line electrode (26) through photo-masking; step 6, forming a second protection layer (27) on the first protection layer (25) and the data line electrode through chemical vapor deposition, and forming first, second and third bridging holes (272, 274, 276) through photo-masking; and step 7, forming a transparent conductive layer (28) on the second protection layer (27) through sputtering, and patterning the transparent conductive layer (28) through photo-masking to obtain the thin-film transistor active device.