Light-emitting diode, light-emitting diode lamp and lighting device

摘要

A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (In_X1Ga_1-X1)As (0≦X1≦1) and barrier layers having the composition: (Al_X2Ga_1-X2)As (0≦X2≦1) are alternately laminated, first guide and second guide layers paired to sandwich the active layer and having the composition: (Al_X3Ga_1-X3)As (0≦X3≦1), and first cladding and second cladding layers paired to sandwich the active layer via the first guide layer and the second guide layer, respectively; a current diffusion layer formed on the light emitting section; and a functional substrate bonded to the current diffusion layer; wherein the first cladding layer and the second cladding layer have the composition: (Al_X4Ga_1-X4)_YIn_1-YP (0≦X4≦1, 0Y≦1); and a light-emitting diode lamp and a lighting device using the same.