首页> 外国专利> Stacked amplifier with diode-based biasing

Stacked amplifier with diode-based biasing

机译:堆叠放大器,基于二极管的偏置

摘要

Techniques for improving linearity of amplifiers are described. In an exemplary design, an amplifier (e.g., a power amplifier) may include a plurality of transistors coupled in a stack and at least one diode. The plurality of transistors may receive and amplify an input signal and provide an output signal. The at least one diode may be operatively coupled to at least one transistor in the stack. Each diode may provide a variable bias voltage to an associated transistor in the stack. Each diode may have a lower voltage drop across the diode at high input power and may provide a higher bias voltage to the associated transistor at high input power. The at least one transistor may have higher gain at high input power due to the higher bias voltage from the at least one diode. The higher gain may improve the linearity of the amplifier.
机译:描述了用于改善放大器的线性度的技术。在示例性设计中,放大器(例如,功率放大器)可以包括以堆叠方式耦合的多个晶体管和至少一个二极管。多个晶体管可以接收和放大输入信号并提供输出信号。至少一个二极管可以可操作地耦合到堆叠中的至少一个晶体管。每个二极管可以向堆叠中的相关晶体管提供可变的偏置电压。在高输入功率下,每个二极管可在二极管两端具有较低的电压降,并在高输入功率下可向相关的晶体管提供较高的偏置电压。由于来自至少一个二极管的较高偏置电压,因此至少一个晶体管在高输入功率下可以具有较高的增益。较高的增益可以改善放大器的线性度。

著录项

  • 公开/公告号US8847689B2

    专利类型

  • 公开/公告日2014-09-30

    原文格式PDF

  • 申请/专利权人 YU ZHAO;NATHAN M. PLETCHER;

    申请/专利号US20100711858

  • 发明设计人 YU ZHAO;NATHAN M. PLETCHER;

    申请日2010-02-24

  • 分类号H03F3/04;

  • 国家 US

  • 入库时间 2022-08-21 16:03:06

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号