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Precursors and methods for the atomic layer deposition of manganese
Precursors and methods for the atomic layer deposition of manganese
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机译:锰原子层沉积的前驱物和方法
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摘要
Methods and precursors are provided for deposition of elemental manganese films on surfaces using metal coordination complexes comprising an eta-3-bound monoanionic four-electron donor ligands selected from amidinate, mixed ene-amido and allyl, or eta-2 bound amidinate ligand. The ligands are selected from amidinate, ene-amido, and allyl.
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