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Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices
Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices
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机译:具有硅器件,III族氮化物器件和III族非氮化物或II-VI器件的半导体结构
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摘要
A semiconductor structure having a silicon substrate having a 111 crystallographic orientation, an insulating layer disposed over a first portion of the silicon substrate, a silicon layer having a 100 orientation disposed over the insulating layer, and a non-nitride column III-V semiconductor layer or column II-VI semiconductor layer having the same 111 crystallographic orientation as the silicon substrate, the non-nitride column III-V semiconductor layer or column II-VI semiconductor layer being in direct contact with a second portion of the silicon substrate. A column III-nitride is disposed on the surface of the third portion of the substrate.
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