SEMICONDUCTOR STRUCTURE HAVING SILICON DEVICES, COLUMN III-NITRIDE DEVICES, AND COLUMN III-NON-NITRIDE OR COLUMN II-VI DEVICES

摘要

A semiconductor structure having a silicon substrate having a 111 crystallographic orientation, an insulating layer disposed over a first portion of the silicon substrate, a silicon layer having a 100 orientation disposed over the insulating layer, and a non-nitride column semiconductor layer or column II-VI semiconductor layer having the same 111 crystallographic orientation as the silicon substrate, the non-nitride column III-V semiconductor layer or column II-VI semiconductor layer being in direct contact with a second portion of the silicon substrate. A column III-nitride is disposed on the surface of the third portion of the substrate.