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Forming wafer-level chip scale package structures with reduced number of seed layers

机译:形成具有较少种子层数量的晶圆级芯片级封装结构

摘要

A method includes forming a passivation layer over a metal pad, which is overlying a semiconductor substrate. A first opening is formed in the passivation layer, with a portion of the metal pad exposed through the first opening. A seed layer is formed over the passivation layer and to electrically coupled to the metal pad. The seed layer further includes a portion over the passivation layer. A first mask is formed over the seed layer, wherein the first mask has a second opening directly over at least a portion of the metal pad. A PPI is formed over the seed layer and in the second opening. A second mask is formed over the first mask, with a third opening formed in the second mask. A portion of a metal bump is formed in the third opening. After the step of forming the portion of the metal bump, the first and the second masks are removed.
机译:一种方法包括在覆盖半导体衬底的金属焊盘上方形成钝化层。在钝化层中形成第一开口,金属焊盘的一部分通过第一开口暴露。种子层形成在钝化层上方并且电耦合到金属焊盘。种子层还包括钝化层上方的一部分。在种子层上方形成第一掩模,其中第一掩模具有直接在金属焊盘的至少一部分上方的第二开口。 PPI形成在种子层上方和第二开口中。在第一掩模上方形成第二掩模,在第二掩模中形成第三开口。金属凸块的一部分形成在第三开口中。在形成金属凸块的部分的步骤之后,去除第一掩模和第二掩模。

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