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High voltage breakover diode having comparable forward breakover and reverse breakdown voltages
High voltage breakover diode having comparable forward breakover and reverse breakdown voltages
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机译:具有相当的正向击穿电压和反向击穿电压的高压击穿二极管
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摘要
In a first embodiment, an ultra-fast breakover diode has a turn on time TON that is less than 0.3 microseconds, where the forward breakover voltage is greater than +400 volts and varies less than one percent per ten degrees Celsius change. In a second embodiment, a breakover diode has a reverse breakdown voltage that is greater, in absolute magnitude, than the forward breakover voltage, where the forward breakover voltage is greater than +400 volts. In a third embodiment, a string of series-connected breakover diode dice is provided, along with a resistor string, in a packaged circuit. The packaged circuit acts like a single breakover diode having a large forward breakover voltage and a comparably large reverse breakdown voltage, even though the packaged circuit includes no discrete high voltage reverse breakdown diode. The packaged circuit is usable to supply a triggering current to a thyristor in a voltage protection circuit.
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机译:在第一个实施例中,超快分断二极管的导通时间T ON Sub>小于0.3微秒,其中正向分流电压大于+400伏,并且每秒钟变化小于百分之一。十摄氏度变化。在第二实施例中,分流二极管的反向击穿电压绝对值大于正向分流电压,其中正向分流电压大于+400伏。在第三实施例中,在封装电路中提供了串联的转换二极管管芯串以及电阻器串。即使封装电路不包括分立的高压反向击穿二极管,封装电路的作用也像具有大的正向击穿电压和相对较大的反向击穿电压的单个击穿二极管一样。该封装电路可用于向电压保护电路中的晶闸管提供触发电流。
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