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Method for quantitatively evaluating concentration of atomic vacancies existing in silicon wafer, method for manufacturing silicon wafer, and silicon wafer manufactured by the method for manufacturing silicon wafer
Method for quantitatively evaluating concentration of atomic vacancies existing in silicon wafer, method for manufacturing silicon wafer, and silicon wafer manufactured by the method for manufacturing silicon wafer
A quantitative evaluation method, a method for manufacturing a silicon wafer, and a silicon wafer manufactured by the method, enabling more efficient evaluation of the concentration of atomic vacancies existing in a silicon wafer. The quantitative evaluation method includes steps of: oscillating, in a state in which an external magnetic field is applied to a silicon wafer (26) while keeping the silicon wafer (26) at a constant temperature, an ultrasonic wave pulse and receiving a measurement wave pulse obtained after the ultrasonic wave pulse is propagated through the silicon wafer (26) for detecting a phase difference between the ultrasonic wave pulse and the measurement wave pulse; and calculating an elastic constant from the phase difference. The external magnetic field is changed to calculate the elastic constant corresponding to a change in the external magnetic field for evaluating a concentration of atomic vacancies in the silicon wafer (26).
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