METHOD FOR QUANTITATIVELY EVALUATING CONCENTRATION OF ATOMIC VACANCIES EXISTING IN SILICON WAFER METHOD FOR MANUFACTURING SILICON WAFER AND SILICON WAFER MANUFACTURED BY THE METHOD FOR MANUFACTURING SILICON WAFER

摘要

A quantitative evaluation method capable of more efficiently evaluating the atomic vacancy concentration present in a silicon wafer, a method of manufacturing a silicon wafer, and a silicon wafer manufactured by the method. An ultrasonic pulse is generated while an external magnetic field is applied to the silicon wafer 26 while the silicon wafer 26 is maintained at a predetermined temperature, and a measurement wave pulse, which propagates the ultrasonic pulse in the silicon wafer 26, A detection step of detecting a phase difference between the ultrasonic pulse and the measurement wave pulse, and a calculation step of calculating an elastic constant from the phase difference. The atomic vacancy concentration in the silicon wafer 26 is evaluated by changing the external magnetic field to calculate the elastic constant corresponding to the change of the external magnetic field.;