InN nanowire based multifunctional nanocantilever sensors

摘要

Sensor are generally provided that include a layer of silicon oxide on a portion of a n+ layer to form an uneven surface where the layer of silicon oxide defines a thicker region than an exposed portion of the n+ layer. First and second metal contacts can be on the layer of silicon oxide, with first and second nanowires extending respectively from a first base on the first metal contact and a second base on the second metal contact. The first nanowire and the second nanowire are connected together at an apex to form a v-shaped nanocantilever, wherein the apex is positioned over the exposed n+ layer, and wherein the nanowires comprise indium and nitrogen. Methods of fabricating such sensors, along with methods of their use, are also generally provided.