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Shallow trench isolation recess repair using spacer formation process
Shallow trench isolation recess repair using spacer formation process
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机译:使用间隔物形成工艺的浅沟槽隔离凹槽修复
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摘要
A method of forming a semiconductor device includes forming a spacer layer over a plurality of transistor gate structures, the transistor gate structures being formed over both active and shallow trench isolation (STI) regions of a substrate. The spacer layer is subjected to a directional etch so as to form sidewall spacers adjacent the plurality of transistor gate structures, and a horizontal fill portion of the spacer layer remains in one more recesses present in the STI regions so as to substantially planarize the STI region prior to subsequent material deposition thereon.
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