Methods of forming photolithographic patterns by negative tone development

摘要

Provided are methods of forming photolithographic patterns by negative tone development. The methods employ a photoresist composition that includes a polymer having a unit of the following general formula (I):; wherein: R₁ represents hydrogen or a C₁ to C₃ alkyl group; a represents an integer from 1 to 3; and b represents 0 or 1. The methods find particular applicability in the manufacture of semiconductor devices.