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Multilayers Having Reduced Perpendicular Demagnetizing Field Using Moment Dilution for Spintronic Applications

机译:自旋电子学应用矩稀释法降低垂直消磁场的多层

摘要

A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. A method for forming the magnetic element is also provided.
机译:公开了一种具有复合自由层的磁性元件,该复合自由层具有FM1 /时刻稀释/ FM2构造,其中FM1和FM2是由Co,Fe,Ni和B中的一种或多种制成的磁性层,并且该矩稀释层用于减少垂直退磁场。结果,当垂直表面各向异性支配形状各向异性以给出垂直于FM1,FM2层平面的磁化强度时,可实现较低的电阻x面积乘积和较高的热稳定性。矩稀释层可以是诸如Ta的非磁性金属或具有掺杂的非磁性金属的CoFe合金。垂直的Hk增强层与FM2层相接,并且可以是氧化物,以增加FM2层中的垂直各向异性场。还提供了一种用于形成磁性元件的方法。

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