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Controlling the demagnetizing field of an in-plane free layer by exchange coupling with a perpendicular multilayer

机译:通过与垂直多层的交换耦合控制平面内自由层的退磁场

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摘要

The demagnetizing field of a Co50Fe50 free layer in an in-plane micron-sized magnetic tunnel junction (MTJ) can be partially compensated by exchange coupling with a [Co90Fe10/Pt] N multilayer with perpendicular magnetic anisotropy via a Ru interlayer. The perpendicular anisotropy for N = 5 is optimized for nominal CoFe and Pt thickness of 0.4 nm and 1.0 nm, respectively. An increase of tunnel magnetoresistance (TMR) from 2% to 75% is observed in MTJs as the free layer thickness, t varies from 1.0 nm to 3.0 nm. A phenomenological model is developed to interpret the TMR dependence in terms of the free layer magnetization rotation from in-plane to out-of-plane with decreasing t, a consequence of interlayer exchange coupling with the perpendicular multilayer. We suggest that this strategy could significantly reduce the switching current density in such MTJs.
机译:平面内微米级磁性隧道结(MTJ)中Co50Fe50自由层的退磁场可以通过与具有垂直磁各向异性的[Co90Fe10 / Pt] N多层膜通过Ru夹层进行交换耦合而得到部分补偿。 N = 5的垂直各向异性分别针对标称CoFe和Pt厚度分别为0.4 nm和1.0 nm进行了优化。随着自由层厚度的增加,MTJs的隧道磁阻(TMR)从2%增加到75%,t从1.0 nm变化到3.0 nm。开发了一种现象学模型来解释TMR依赖关系,即随着层间交换与垂直多层的耦合,自由层磁化从平面内到平面外的自由层磁化旋转随着t的减小而变化。我们建议这种策略可以显着降低此类MTJ中的开关电流密度。

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  • 来源
    《The European Physical Journal B》 |2013年第3期|1-5|共5页
  • 作者单位

    School of Physics and CRANN Trinity College">(1110);

    School of Physics and CRANN Trinity College">(1110);

    School of Physics and CRANN Trinity College">(1110);

    School of Physics and CRANN Trinity College">(1110);

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