Capacitor designs for integrated circuits utilizing self-aligned double patterning (SADP)
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机译:利用自对准双图案(SADP)的集成电路电容器设计
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摘要
Methodologies enabling BEoL VNCAPs in ICs and resulting devices are disclosed. Embodiments include: providing a plurality of mandrel recesses extending horizontally on a substrate, each of the mandrel recesses having an identical width and being separated from another one of the mandrel recesses by an identical distance; providing a plurality of routes, each of the plurality of routes being positioned in a different one of the mandrel recesses; and providing first and second vertical segments on the substrate, the first vertical segment being connected to a set of the plurality of routes and separated from the second vertical segment, and the second vertical segment being separated from the set of routes.
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