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Semiconductor device having electrode/film opening edge spacing smaller than bonding pad/electrode edge spacing
Semiconductor device having electrode/film opening edge spacing smaller than bonding pad/electrode edge spacing
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机译:电极/膜开口边缘间距小于键合焊盘/电极边缘间距的半导体器件
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摘要
A semiconductor device has a conductive member coupled to the surface of a bonding pad exposed from an opening formed in a passivation film. A second planar distance between a first end of an electrode layer and a first end of a bonding pad is greater than a first planar distance between the first end of the electrode layer and a first end of an opening. Since the second planar distance between the first end of the electrode layer and the first end of the bonding pad is long, even when a coupled position of wire is deviated to the first end side of the electrode layer, stress caused by coupling of the wire to a stepped portion of the electrode layer can be prevented from being transmitted to the first end portion of the bonding pad.
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