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Fabrication of a localized thick box with planar oxide/SOI interface on bulk silicon substrate for silicon photonics integration
Fabrication of a localized thick box with planar oxide/SOI interface on bulk silicon substrate for silicon photonics integration
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机译:在块状硅基板上制造具有平面氧化物/ SOI界面的局部厚盒,用于集成硅光子
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摘要
Line trenches are formed in a stack of a bulk semiconductor substrate and an oxygen-impermeable layer such that the depth of the trenches in the bulk semiconductor substrate is greater than the lateral spacing between a pair of adjacently located line trenches. Oxygen-impermeable spacers are formed on sidewalls of the line trenches. An isotropic etch, either alone or in combination with oxidation, removes a semiconductor material from below the oxygen-impermeable spacers to expand the lateral extent of expanded-bottom portions of the line trenches, and to reduce the lateral spacing between adjacent expanded-bottom portions. The semiconductor material around the bottom portions is oxidized to form a semiconductor oxide portion that underlies multiple oxygen-impermeable spacers. Semiconductor-on-insulator (SOI) portions are formed above the semiconductor oxide portion and within the bulk semiconductor substrate.
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