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Monocyclic high aspect ratio titanium inductively coupled plasma deep etching processes and products so produced

机译:单环高深宽比钛电感耦合等离子体深蚀刻工艺及其产品

摘要

Monocyclic chlorine based inductively coupled plasma deep etching processes for the rapid micromachining of titanium substrates and titanium devices so produced are disclosed. The method parameters are adjustable to simultaneously vary etch rate, mask selectivity, and surface roughness and can be applied to titanium substrates having a wide variety of thicknesses to produce high aspect ratio features, smooth sidewalls, and smooth surfaces. The titanium microdevices so produced exhibit beneficially high fracture toughness, biocompatibility and are robust and able to withstand harsh environments making them useful in a wide variety of applications including microelectronics, micromechanical devices, MEMS, and biological devices that may be used in vivo.
机译:公开了基于钛的单环基于感应耦合的等离子体深蚀刻工艺,用于钛基板和如此制造的钛器件的快速微加工。该方法参数是可调节的,以同时改变蚀刻速率,掩模选择性和表面粗糙度,并且可以应用于具有多种厚度的钛基板,以产生高的长宽比特征,光滑的侧壁和光滑的表面。如此生产的钛微器件显示出有益的高断裂韧性,生物相容性,并且坚固并且能够承受恶劣的环境,从而使其可用于包括微电子,微机械器件,MEMS以及可在体内使用的生物器件在内的多种应用。

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