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Semiconductor device element formed on SOI substrate comprising a hollow region, and having capacitors in an electric field alleviation region
Semiconductor device element formed on SOI substrate comprising a hollow region, and having capacitors in an electric field alleviation region
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机译:形成在SOI衬底上的半导体器件元件,该SOI衬底包括空心区域,并且在电场缓和区域中具有电容器
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摘要
In a region located between a collector electrode and a semiconductor substrate, there are a portion where a hollow region is located and a portion where no hollow region is located. Between the collector electrode and the portion where no hollow region is located in the semiconductor substrate, a floating silicon layer electrically isolated by insulating films is formed.
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