Production of a semiconductor device e.g. chain ferroelectric random access memory device comprises forming and/or structuring capacitor arrangements on semiconductor substrate, passivating region and/or surface region

摘要

Production of a semiconductor device comprises forming and/or structuring capacitor arrangements (10-1, ..., 10-4) on a semiconductor substrate (20), a passivating region (21) and/or surface region (20a, 21a), and forming a three-dimensional arrangement for the capacitor arrangements. An Independent claim is also included for the semiconductor device produced by the above process. Preferred Features: Electrode arrangements (14, 18) and a dielectric (16) of each capacitor arrangement are formed and/or structured on the substrate, passivating region and/or surface region.