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Integrated circuit with memory built-in self test (MBIST) circuitry having enhanced features and methods

机译:具有存储器内置自测(MBIST)电路的集成电路,具有增强的功能和方法

摘要

Integrated circuits with memory built-in self test (MBIST) circuitry and methods are disclosed that employ enhanced features. In one aspect of the invention, an integrated circuit is provided having MIBST circuitry configured to serially test multiple arrays of memory elements within a component of the integrated circuit and to also conduct parallel initialization of the serially tested arrays. In another aspect of the invention, the MBST circuitry is used set the memory elements of the arrays to a first state and then to an inverse state during a burn-in operation to maintain each of the two opposing states for a desired time in order to either force a failure of the integrated circuit component or produce a pre-stressed component beyond an infancy stage.
机译:公开了具有存储器内置自测试(MBIST)电路和方法的集成电路,其采用增强的特征。在本发明的一个方面,提供了一种具有MIBST电路的集成电路,该MIBST电路被配置为对集成电路的组件内的存储元件的多个阵列进行串行测试,并且还对串行测试的阵列进行并行初始化。在本发明的另一方面,使用MBST电路在老化操作期间将阵列的存储元件设置为第一状态,然后设置为反向状态,以将两个相对状态的每一个保持期望的时间,以便要么迫使集成电路组件发生故障,要么产生超出婴儿期的预应力组件。

著录项

  • 公开/公告号US8639994B2

    专利类型

  • 公开/公告日2014-01-28

    原文格式PDF

  • 申请/专利权人 ADVANCED MICRO DEVICES INC.;

    申请/专利号US201313839621

  • 发明设计人 WEI-YU CHEN;KEVIN BADGETT;KAY HESSE;

    申请日2013-03-15

  • 分类号G01R31/28;

  • 国家 US

  • 入库时间 2022-08-21 15:59:16

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