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Piezoelectric-on-semiconductor micromechanical resonators with linear acoustic bandgap tethers

机译:具有线性声带隙系链的压电半导体微机械谐振器

摘要

Microelectromechanical resonators include a resonator body anchored to a substrate by at least one tether containing a coupled-ring linear acoustic bandgap structure therein. The coupled-ring linear acoustic bandgap structure can include a plurality of piezoelectric-on-semiconductor rings connected together by a plurality of piezoelectric-on-semiconductor tether segments. A first electrode may also be provided, which extends on the resonator body and the coupled-ring linear acoustic bandgap structure. This resonator body, which may be suspended opposite a recess in the substrate, may include a semiconductor (e.g., silicon) body having a piezoelectric layer (e.g., AlN) thereon, which extends between the semiconductor body and the first electrode. The coupled-ring linear acoustic bandgap structure may be a periodic structure, where a pitch between each of the plurality of piezoelectric-on-semiconductor rings in the at least one tether is equivalent, or a non-periodic structure.
机译:微机电谐振器包括通过至少一个在其中包含耦合环线性声带隙结构的系绳锚定到基板的谐振器主体。耦合环线性声带隙结构可以包括通过多个半导体压电栓系链段连接在一起的多个半导体压电环。也可以提供第一电极,该第一电极在谐振器主体和耦合环线性声带隙结构上延伸。可以相对于衬底中的凹部悬挂地悬挂的该谐振器主体可以包括其上具有在半导体主体和第一电极之间延伸的压电层(例如,AlN)的半导体(例如,硅)主体。耦合环线性声带隙结构可以是周期性结构,也可以是非周期性结构,在周期性结构中,至少一个系链中的多个半导体压电环之间的间距相等。

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