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One-dimensional linear acoustic bandgap structures for performance enhancement of AlN-on-Silicon micromechanical resonators

机译:一维线性声带隙结构,用于增强硅上AlN谐振器的性能

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This work introduces piezo-on-silicon linear acoustic bandgap (LAB) structures, a class of compact 1D micro-scale phononic crystal (PC) which can be directly integrated with micromechanical devices. Finite element simulations with custom-derived dispersion equations predict multiple bandgaps for coupled-ring LAB structures into the GHz region. AlN-on-Si resonator are replaced with coupled-ring LAB tethers to reduce acoustic loss into the substrate; the existence of bandgaps is experimentally confirmed in transmission spectra of test structures as well as quality factor (Q) and insertion loss (IL) improvements of LAB-enhanced resonators. An IL of 3.8 dB at 178 MHz and Qs of greater than 11,000 at 600 MHz in air are reported.
机译:这项工作介绍了压电硅上线性声带隙(LAB)结构,这是一类紧凑的一维微尺度声子晶体(PC),可以直接与微机械设备集成。带有自定义色散方程的有限元模拟可预测将耦合环LAB结构带入GHz区域的多个带隙。用耦合环LAB系绳代替AlN-on-Si谐振器,以减少进入基板的声损耗;在测试结构的透射光谱以及LAB增强谐振器的品质因数(Q)和插入损耗(IL)改善中,实验证实了带隙的存在。据报道,在178 MHz处的IL为3.8 dB,在空气中600 MHz时的Qs大于11,000。

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