A PROCESS FOR THE PREPARATION OF BRUSH PLATED TIN SULFO SELENIDE SEMICONDUCTOR THIN FILM ELECTRODE USEFUL FOR PHOTO ELECTROCHEMICAL (PEC) CELLS

摘要

The present invention provides a process for the preparation of tin sulfo selenide semiconductor thin film electrode useful for photoelectrochemical cells. The thin tin sulfo selenide semiconductor thin film is prepared through a simple and cost effective brush plating method on tin oxide coated glass substrates from a solution of 5.0 mM of SnCI2, 2.5mM of Na2S2O3 and 2.5 mM of SeO2. The pH and temperature was maintained at 1-1.5 and 25-30°C, respectively, throughout the experiment. XRD pattern of brush plated SnS0.5Se0.5 film prepared under optimized conditions showed polycrystalline nature with peaks corresponding to orthorhombic structure. The tin sulfo selenide thin film electrode prepared is of p type in nature and found to be chemically and photo chemically stable.