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SEMICONDUCTOR DEVICE AND METHOD OF BONDING DIFFERENT SIZESEMICONDUCTOR DIE AT THE WAFER LEVEL
SEMICONDUCTOR DEVICE AND METHOD OF BONDING DIFFERENT SIZESEMICONDUCTOR DIE AT THE WAFER LEVEL
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机译:晶圆级键合不同尺寸半导体芯片的半导体器件和方法
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摘要
A semiconductor wafer has first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the semiconductor wafer. The semiconductor wafer is singulated into a plurality of first semiconductor die. The first semiconductor die are mounted to a carrier. A second semiconductor die is mounted to the first semiconductor die. A footprint of the second semiconductor die is larger than a footprint of the first semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. The carrier is removed. A portion of the second surface is removed to expose the conductive vias. An interconnect structure is formed over a surface of the first semiconductor die opposite the second semiconductor die. Alternatively, a first encapsulant is deposited over the first semiconductor die and carrier, and a second encapsulant is deposited over the second semiconductor die.
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