首页>
外国专利>
SINGLE-CRYSTAL SUBSTRATE, GROUP III ELEMENT NITRIDE CRYSTAL OBTAINED USING SAME, AND PROCESS FOR PRODUICNG GROUP III ELEMENT NITRIDE CRYSTAL
SINGLE-CRYSTAL SUBSTRATE, GROUP III ELEMENT NITRIDE CRYSTAL OBTAINED USING SAME, AND PROCESS FOR PRODUICNG GROUP III ELEMENT NITRIDE CRYSTAL
展开▼
机译:单晶基质,使用相同方法获得的III类元素氮化物晶体和生产III类元素氮化物的过程
展开▼
页面导航
摘要
著录项
相似文献
摘要
Provided is a base substrate with which a Group-III nitride crystal having a large area and a large thickness can be grown while inhibiting crack generation. A single-crystal substrate for use in growing a Group-III nitride crystal thereon, which satisfies the following expression (1), wherein Z1 (µm) is an amount of warpage of physical shape in a growth surface of the single-crystal substrate and Z2 (µm) is an amount of warpage calculated from a radius of curvature of crystallographic-plane shape in a growth surface of the single-crystal substrate: -40Z2/Z1-1 : Expression (1).
展开▼