首页> 外国专利> THROUGH-SILICON VIAS AND INTERPOSERS FORMED BY METAL-CATALYZED WET ETCHING

THROUGH-SILICON VIAS AND INTERPOSERS FORMED BY METAL-CATALYZED WET ETCHING

机译:通过金属催化湿蚀刻形成的硅通孔和中介层

摘要

Methods for making a through-silicon via feature in a silicon substrate and related systems are formed with a noble metal structure on a silicon substrate support surface to generate silicon substrate contact regions that are in contact with or proximate to the noble metal structure; exposing at least a portion of the silicon substrate support surface and noble metal structure to an etchant to preferentially etch the silicon substrate contact regions compared to silicon substrate non-contact regions until the etch front reaches the silicon substrate bottom surface.
机译:在硅衬底和相关系统中形成硅通孔特征的方法在硅衬底支撑表面上形成有贵金属结构,以产生与贵金属结构接触或接近的硅衬底接触区域。与硅衬底非接触区域相比,将硅衬底支撑表面和贵金属结构的至少一部分暴露于蚀刻剂以优先蚀刻硅衬底接触区域,直到蚀刻前沿到达硅衬底底表面为止。

著录项

  • 公开/公告号WO2014144266A1

    专利类型

  • 公开/公告日2014-09-18

    原文格式PDF

  • 申请/专利权人 SEMPRIUS INC.;

    申请/专利号WO2014US28599

  • 发明设计人 MEITL MATTHEW;BOWER CHRISTOPHER;

    申请日2014-03-14

  • 分类号H01L21/302;H01L21/3213;H01L29/06;

  • 国家 WO

  • 入库时间 2022-08-21 15:47:18

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