FULLY COMPENSATED SYNTHETIC ANTIFERROMAGNET FOR SPINTRONICS APPLICATIONS

摘要

A synthetic antiferromagnet (30) that may serve as a reference layer for a magnetic tunnel junction (MTJ) is disclosed and is a laminate with a plurality of "x+1" magnetic sub-layers (22a...22(x+1)) and "x" non-magnetic spacers (23a...23x) arranged in an alternating fashion such that there is a magnetic sub-layer at the top and bottom of the laminated stack. Each spacer has a top surface and bottom surface that interfaces with an adjoining magnetic sub-layer and thereby generates antiferromagnetic coupling between the adjoining sub¬ layers. Perpendicular magnetic anisotropy (PMA) is also induced in each magnetic sub-layer through an interface with a spacer. As a result, the dipole field exerted on a free layer is substantially reduced compared with that produced by a conventional synthetic antiferromagnetic reference layer. Magnetic sub-layers are preferably Co while Ru, Rh, or Ir may serve as non-magnetic spacers.