首页> 外国专利> FULLY COMPENSATED SYNTHETIC ANTIFERROMAGNET FOR SPINTRONICS APPLICATIONS

FULLY COMPENSATED SYNTHETIC ANTIFERROMAGNET FOR SPINTRONICS APPLICATIONS

机译:面向全电子应用的全补偿合成抗铁磁网

摘要

A synthetic antiferromagnet serving as a reference layer for a magnetic tunnel junction is a laminate with a plurality of x+1 magnetic sub-layers and x non-magnetic spacers arranged in an alternating fashion, with a magnetic sub-layer at the top and bottom of the laminated stack. Each spacer has a top and bottom surfaces that interface with adjoining magnetic sub-layers generating antiferromagnetic coupling between the adjoining sub-layers. Perpendicular magnetic anisotropy is induced in each magnetic sub-layer through an interface with a spacer. Thus the dipole field exerted on a free layer is substantially reduced compared with that produced by a conventional synthetic antiferromagnetic reference layer. Magnetic sub-layers are preferably Co while Ru, Rh, or Ir may serve as non-magnetic spacers.
机译:用作磁性隧道结参考层的合成反铁磁体是一种层压板,该层压板具有多个x + 1磁性子层和x个非磁性间隔层,这些子层以交替的方式排列,并且磁性子层位于顶部和底部叠层的数量。每个间隔物具有与邻接的磁性子层相接的顶表面和底表面,从而在邻接的子层之间产生反铁磁耦合。通过与间隔物的界面在每个磁性子层中感应出垂直的磁各向异性。因此,与传统的合成反铁磁参考层所产生的偶极场相比,施加在自由层上的偶极子场大大减小了。磁性子层优选为Co,而Ru,Rh或Ir可以用作非磁性间隔物。

著录项

  • 公开/公告号EP2987190A1

    专利类型

  • 公开/公告日2016-02-24

    原文格式PDF

  • 申请/专利权人 HEADWAY TECHNOLOGIES INC.;

    申请/专利号EP20140725313

  • 发明设计人 JAN GUENOLE;TONG RU-YING;

    申请日2014-04-14

  • 分类号H01L43/08;H01F10/30;H01F10/32;H01L43/12;

  • 国家 EP

  • 入库时间 2022-08-21 14:48:44

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