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FULLY COMPENSATED SYNTHETIC ANTIFERROMAGNET FOR SPINTRONICS APPLICATIONS
FULLY COMPENSATED SYNTHETIC ANTIFERROMAGNET FOR SPINTRONICS APPLICATIONS
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机译:面向全电子应用的全补偿合成抗铁磁网
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摘要
A synthetic antiferromagnet serving as a reference layer for a magnetic tunnel junction is a laminate with a plurality of x+1 magnetic sub-layers and x non-magnetic spacers arranged in an alternating fashion, with a magnetic sub-layer at the top and bottom of the laminated stack. Each spacer has a top and bottom surfaces that interface with adjoining magnetic sub-layers generating antiferromagnetic coupling between the adjoining sub-layers. Perpendicular magnetic anisotropy is induced in each magnetic sub-layer through an interface with a spacer. Thus the dipole field exerted on a free layer is substantially reduced compared with that produced by a conventional synthetic antiferromagnetic reference layer. Magnetic sub-layers are preferably Co while Ru, Rh, or Ir may serve as non-magnetic spacers.
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