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Fully compensated synthetic antiferromagnet for spintronics applications
Fully compensated synthetic antiferromagnet for spintronics applications
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机译:用于自旋电子学的全补偿合成反铁磁体
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摘要
A synthetic antiferromagnet serving as a reference layer for a magnetic tunnel junction is a laminate with a plurality of “x+1” magnetic sub-layers and “x” non-magnetic spacers arranged in an alternating fashion, with a magnetic sub-layer at the top and bottom of the laminated stack. Each spacer has a top and bottom surfaces that interface with adjoining magnetic sub-layers generating antiferromagnetic coupling between the adjoining sub-layers. Perpendicular magnetic anisotropy is induced in each magnetic sub-layer through an interface with a spacer. Thus the dipole field exerted on a free layer is substantially reduced compared with that produced by a conventional synthetic antiferromagnetic reference layer. Magnetic sub-layers are preferably Co while Ru, Rh, or Ir may serve as non-magnetic spacers.
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机译:用作磁性隧道结参考层的合成反铁磁体是一种层压板,其中有多个“ x + 1”磁性子层和“ x”非磁性间隔层以交替方式排列,并且磁性子层位于叠层的顶部和底部。每个间隔物具有与邻接的磁性子层相接的顶表面和底表面,从而在邻接的子层之间产生反铁磁耦合。通过与间隔物的界面在每个磁性子层中感应出垂直的磁各向异性。因此,与传统的合成反铁磁参考层所产生的偶极场相比,施加在自由层上的偶极子场大大减小了。磁性子层优选为Co,而Ru,Rh或Ir可以用作非磁性间隔物。
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